J. Technology and Education, Vol.13, No.2, pp.33-37, 2006
研究論文
住毋家岩夫*1、森本健太1、比留間文彦†2
1鞄d硝エンジニアリング （〒347-0111 埼玉県北埼玉郡騎西町鴻茎3202-1）
2ウェールズ大学 （〒162-0825 東京都新宿区神楽坂1-2）
†adm@u-wales.jp
New Integrated Technology of Sandblasting for High-tech Industry
Iwao SUMOGE*1, Kenta MORIMOTO1, Fumihiko HIRUMA2
1Densho Engineering Co., Ltd. (3202-1, Koguki, Kisai, Kita-Saitama, Saitama 347-0111)
2University of Wales (1-2, Kagurazaka, Shinjuku, Tokyo 162-0825)
(Received June 6, 2006; Accepted September 11, 2006)
Abstract
In this study, by using a new method of sandblasting, we designed a method for producing high performance components used in semiconductor and LCD devices which have a longer lifetime than conventionally produced components. The effectiveness of this method has been verified.
We aimed for a component performance equivalent to that of components produced by high-cost aluminum thermal spraying. In order to reduce transformation of metal parts, we developed a process which employed a lower pressure (1.5 Kgf ~ 0.5 Kgf) than conventional processes. Our goal is to eventually develop a surface treatment that is capable of producing surfaces having an Rmax of 75 µm ~ 120 µm, which has never been achieved before.
In this study, we used f10 and f12 SiC (JIS R6001, 1998) as the shot grit.
Key words: Sandblast, Surface Treatment, Shield Parts
